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MT28EW512ABA1LJS-0SIT PDF预览

MT28EW512ABA1LJS-0SIT

更新时间: 2024-04-09 18:58:04
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
81页 1091K
描述
Parallel NOR Flash

MT28EW512ABA1LJS-0SIT 数据手册

 浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第1页浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第3页浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第4页浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第5页浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第6页浏览型号MT28EW512ABA1LJS-0SIT的Datasheet PDF文件第7页 
512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR  
Features  
Part Numbering Information  
For available options, such as packages or high/low protection, or for further information, contact your Micron  
sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by  
device type is available at www.micron.com/products. Contact the factory for devices not found.  
Figure 1: Part Number Chart  
H
MT 28E W 512  
A
B
A
1
JS - 0  
S
IT ES  
Micron Technology  
Part Family  
Production Status  
Blank = Production  
ES = Engineering sample  
28E = Embedded Parallel NOR  
Operating Temperature  
Voltage  
IT = –40°C to +85°C  
W = 2.7–3.6V VCC core  
Special Options  
Density  
S = Standard  
128 = 128Mb  
256 = 256Mb  
512 = 512Mb  
01G = 1Gb  
02G = 2Gb  
Security Features  
0 = Standard default security  
1 = OTP configurable  
Package Codes  
Stack  
A = Single die  
B = Two die  
JS = 56-pin TSOP, 14mm x 20mm  
PN = 56-ball VFBGA, 7mm x 9mm  
PC = 64-ball LBGA, 11mm x 13mm  
(All packages are lead-free, halogen-free,  
RoHS-compliant)  
Device Generation  
B = 2nd generation  
Block Structure  
H = High lock  
L = Low lock  
Die Revision  
A = Rev A  
Configuration  
1 = x8, x16  
PDF: 09005aef855e354a  
mt28ew_generation-b_512mb.pdf - Rev. I 05/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
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