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MT28F002B3

更新时间： 2022-12-11 18:17:54
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
31页 558K
描述
FLASH MEMORY

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MT28F002B3 数据手册

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2Mb  
SMART 3 BOOT BLOCK FLASH MEMORY  
FLASH MEMORY  
MT28F002B3  
MT28F200B3  
3V On ly, Du a l Su p p ly (Sm a rt 3)  
FEATURES  
• Five erase blocks:  
40-Pin TSOP Typ e I 48-Pin TSOP Typ e I  
16KB/8K-word boot block (protected)  
Two 8KB/4K-word parameter blocks  
Two main memory blocks  
• Smart 3 technology (B3):  
3.3V ±0.3V VCC  
3.3V ±0.3V VPP application programming  
5V ±10% VPP application/production  
programming  
12V ±5% VPP compatibility production  
programming  
44-Pin SOP  
• Address access times: 90ns, 100ns  
• 100,000 ERASE cycles  
• Industry-standard pinouts  
• Inputs and outputs are fully TTL-compatible  
• Automated write and erase algorithm  
• Two-cycle WRITE/ERASE sequence  
• Byte- or word-wide READ and WRITE  
(MT28F200B3, 128K x 16/256K x 8)  
• Byte-wide READ and WRITE only  
(MT28F002B3, 256K x 8)  
GENERAL DESCRIPTION  
The MT28F002B3 (x8) and MT28F200B3 (x16/x8)  
are nonvolatile, electrically block-erasable (flash), pro-  
grammable, read-only memories containing 2,097,152  
• TSOP and SOP packaging options  
bits organized as 131,072 words (16 bits) or 262,144  
bytes (8 bits). Writing or erasing the device is done with  
either a 3.3V or 5V VPP voltage, while all operations are  
performed with a 3.3V VCC. Due to process technology  
advances, 5V VPP is optimal for application and produc-  
tion programming. For backward compatibility with  
SmartVoltage technology, 12V VPP is supported for a  
maximum of 100 cycles and may be connected for up  
to 100 cumulative hours. These devices are fabricated  
with Micron’s advanced CMOS floating-gate process.  
The MT28F002B3 and MT28F200B3 are organized  
into five separately erasable blocks. To ensure that  
critical firmware is protected from accidental erasure or  
overwrite, the devices feature a hardware-protected  
boot block. Writing or erasing the boot block requires  
either applying a super-voltage to the RP# pin or driv-  
ing WP# HIGH in addition to executing the normal  
writeorerasesequences. Thisblockmaybeusedtostore  
code implemented in low-level system recovery. The  
remaining blocks vary in density and are written and  
erased with no additional security measures.  
OPTIONS  
• Timing  
MARKING  
90ns access  
100ns access  
-9  
-10 ET  
• Configurations  
256K x 8  
MT28F002B3  
MT28F200B3  
128K x 16/256K x 8  
• Boot Block Starting Word Address  
Top (1FFFFH)  
T
B
Bottom (00000H)  
• Operating Temperature Range  
Commercial (0°C to +70°C)  
Extended (-40°C to +85°C)  
None  
ET  
• Packages  
Plastic 44-pin SOP (600 mil)  
Plastic 48-pin TSOP Type 1  
(12mm x 20mm)  
Plastic 40-pin TSOP  
(10mm x 20mm)  
SG  
WG  
VG  
Part Number Example:  
PleaserefertoMicron’sWebsite(www.micron.com/  
flash/htmls/datasheets.html) for the latest data sheet.  
MT28F200B3SG-9 T  
2Mb Smart 3 Boot Block Flash Memory  
F48.p65 – Rev. 1/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000, Micron Technology, Inc.  
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