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MSTC40-12 PDF预览

MSTC40-12

更新时间: 2024-11-04 17:26:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网栅极
页数 文件大小 规格书
4页 184K
描述
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, T1, 7 PIN

MSTC40-12 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.82外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:150 mA
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大均方根通态电流:62.8 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

MSTC40-12 数据手册

 浏览型号MSTC40-12的Datasheet PDF文件第2页浏览型号MSTC40-12的Datasheet PDF文件第3页浏览型号MSTC40-12的Datasheet PDF文件第4页 
MSTC40  
Thyristor/Diode Modules  
VRRM / VDRM 800 to 1600V  
ITAV  
40Amp  
Applications  
y
y
y
y
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
6
7
y
y
y
y
y
International standard package  
High Surge Capability  
1
2
3
MSTC  
Glass passivated chip  
Simple Mounting  
Heat transfer through aluminum oxide DCB  
ceramic isolated metal baseplate  
5
4
Module Type  
TYPE  
VRRM  
VRSM  
MSTC40-08  
MSTC40-12  
MSTC40-16  
800V  
1200V  
1600V  
900V  
1300V  
1700V  
Maximum Ratings  
Symbol  
Conditions  
Values  
Units  
ITAV  
Sine 180o;Tc=85  
40  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
1000  
850  
ITSM  
i2t  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
5000  
3600  
A2s  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
3000  
V
-40 to 125  
-40 to 125  
3±15%  
5±15%  
Tstg  
Mt  
To terminals(M5)  
To heatsink(M6)  
Nm  
Nm  
Ms  
TVJ= TVJM , 2/3VDRM ,IG =500mA  
Tr<0.5us,tp>6us  
di/dt  
150  
A/us  
dv/dt  
a
TJ= TVJM ,2/3VDRM linear voltage rise  
Maximum allowable acceleration  
Module(Approximately)  
1000  
50  
V/us  
m/s2  
g
Weight  
100  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Conditions  
Cont.;per thyristor / per module  
Values  
0.65/0.33  
0.2/0.1  
Units  
/W  
Rth(c-s)  
per thyristor / per module  
/W  
MSTC40 – Rev 0  
Oct, 2011  
www.microsemi.com  
1/4  

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