Datasheet > MSTF45H120UU

MSTF45H120UU

更新时间： 2024-11-05 18:09:27

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
3页	1653K
描述
TO-247

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数据手册

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MSTF45H120UU 数据手册

ESTF45H120UU

Standard Rectifier

Features



Planar passivated chips

Very low leakage current

Very low forward voltage drop

Improved thermal behaviour

Applications



Diode for main rectification

For single and three phase

bridge configurations

Absolute Maximum Ratings(Tc=25℃)

Parameter

Symbol

Test Conditions

Values

Unit

Repetitive Peak Reverse

Voltage

V_RRM

1200

Tc=25°C

V_R=1200V

1.5

μA

Reverse current,drain current

Forward voltage drop (per)

I_R

Tc=125°C

I_F=45A

Tc=25°C

I_F=90A

1.26

1.57

V_F

Surge Current

I_FAV

V_F0

Tc=125°C

For power loss

calculation only

Tc=125°C

Threshold voltage

0.81

9.1

Slope resistance

r_F

mΩ

T=10ms,(50Hz),sine,

V_R=0V

Forward surge current

I_FSM

480

T=10ms,(50Hz),sine,

V_R=0V

Value for fusing

I²t

1.15

KA²S

Power Dissipation

Junction Temperature

Ptot

T_J

270

-40~175

-40~150

℃

Storage Temperature Range

T_STG

Thermal Resistance junction to

case

R_θJC

0.55

0.3

Thermal Resistance case to

heatsink

R_θch

Electrical Characteristics(T_C=25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max. Unit

H0.01

12 3

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