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MSTC110-08 PDF预览

MSTC110-08

更新时间: 2024-11-05 01:09:43
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描述
Thyristor/Diode Modules

MSTC110-08 数据手册

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MSTC110  
Thyristor/Diode Modules  
VRRM / VDRM 800 to 1600V  
ITAV  
110Amp  
Applications  
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
6
7
International standard package  
High Surge Capability  
1
2
3
MSTC  
Glass passivated chip  
Simple Mounting  
Heat transfer through aluminum oxide DCB  
ceramic isolated metal baseplate  
5
4
Module Type  
TYPE  
VRRM  
VRSM  
MSTC110-08  
MSTC110-12  
MSTC110-16  
800V  
1200V  
1600V  
900V  
1300V  
1700V  
Maximum Ratings  
Symbol  
Conditions  
Values  
Units  
ITAV  
Sine 180o;Tc=85  
110  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
2250  
1900  
ITSM  
i2t  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
25000  
18000  
A2s  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
3000  
V
-40 to 130  
-40 to 125  
3±15%  
5±15%  
Tstg  
Mt  
To terminals(M5)  
To heatsink(M6)  
Nm  
Nm  
Ms  
TVJ= TVJM , 2/3VDRM ,IG =500mA  
Tr<0.5us,tp>6us  
di/dt  
150  
A/us  
dv/dt  
a
TJ= TVJM ,2/3VDRM, linear voltage rise  
Maximum allowable acceleration  
Module(Approximately)  
1000  
50  
V/us  
m/s2  
g
Weight  
100  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Conditions  
Cont.;per thyristor / per module  
Values  
0.28/0.14  
0.2/0.1  
Units  
/W  
Rth(c-s)  
per thyristor / per module  
/W  
Document Number: MSTC110  
Sep.06,2013  
www.smsemi.com  
1

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