MSMLJ8.0A/TR

更新时间： 2024-09-26 13:11:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管光电二极管局域网
页数	文件大小	规格书
4页	250K
描述
Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMLJ, 2 PIN

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技术参数
数据手册

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MSMLJ8.0A/TR 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	R-PDSO-C2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.39	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	最大击穿电压：	9.83 V
最小击穿电压：	8.89 V	击穿电压标称值：	9.36 V
最大钳位电压：	13.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.61 W	认证状态：	Not Qualified
最大重复峰值反向电压：	8 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Tin/Lead (Sn10Pb90)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MSMLJ8.0A/TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 3000 Watt

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (VWM)

LEVELS

M, MA, MX, MXL

DEVICES

MSMLJ5.0A thru MSMLJ170CA, e3

and MSMLG5.0A thru MSMLG170CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129

for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W

rating, (consult factory for other surface mount options)

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Suppresses transients up to 3000 watts @ 10/1000 µs

Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1 & 2: MSML5.0A to MSML 170ACA

Class 3: MSML5.0A to MSML150CA

Class 4: MSML5.0A to MSML75CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MSML5.0A to MSML170CA

Class 2: MSML5.0A to MSML90CA

Class 3: MSML5.0A to MSML48CA

Class 4: MSML5.0A to MSML24CA

Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:

Class 2: MSML5.0A to MSML43CA

Class 3: MSML5.0A to MSML22CA

Class 4: MSML5.0A to MSML10CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000 μs (also see Figures 1,2, and 3) with

impulse repetition rate (duty factor) of 0.01 % or less

(0 V to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

clamping

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or

1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01003 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

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与MSMLJ8.0A/TR相关器件

型号	品牌	获取价格	描述	数据表
MSMLJ8.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSMLJ8.0AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSMLJ8.0ATR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMLJ, 2 PIN
MSMLJ8.0CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MSMLJ8.0CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MSMLJ8.0CAE3TR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN
MSMLJ8.0CATR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMLJ, 2 PIN
MSMLJ8.5A	MICROSEMI	获取价格	SURFACE MOUNT 3000 Watt Transient Voltage Suppressor
MSMLJ8.5A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MSMLJ8.5AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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