是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | R-PDSO-J2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.3 |
其他特性: | HIGH RELIABILITY | 最大击穿电压: | 104 V |
最小击穿电压: | 94.4 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AB | JESD-30 代码: | R-PDSO-J2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 3000 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.61 W | 参考标准: | MIL-19500 |
最大重复峰值反向电压: | 85 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSMLJ85CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MSMLJ85CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MSMLJ85CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MSMLJ85CAE3TR | MICROSEMI |
获取价格 |
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN | |
MSMLJ85CATR | MICROSEMI |
获取价格 |
暂无描述 | |
MSMLJ9.0A | MICROSEMI |
获取价格 |
SURFACE MOUNT 3000 Watt Transient Voltage Suppressor | |
MSMLJ9.0AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MSMLJ9.0AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MSMLJ9.0AE3TR | MICROSEMI |
获取价格 |
3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN | |
MSMLJ9.0ATR | MICROSEMI |
获取价格 |
3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMLJ, 2 PIN |