是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.39 | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 9.83 V | 最小击穿电压: | 8.89 V |
击穿电压标称值: | 9.36 V | 最大钳位电压: | 13.6 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AB |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 3000 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.61 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 8 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSMLJ8.0CAE3TR | MICROSEMI |
获取价格 |
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN | |
MSMLJ8.0CATR | MICROSEMI |
获取价格 |
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMLJ, 2 PIN | |
MSMLJ8.5A | MICROSEMI |
获取价格 |
SURFACE MOUNT 3000 Watt Transient Voltage Suppressor | |
MSMLJ8.5A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMLJ8.5AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMLJ8.5AE3TR | MICROSEMI |
获取价格 |
3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN | |
MSMLJ8.5ATR | MICROSEMI |
获取价格 |
暂无描述 | |
MSMLJ8.5CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MSMLJ8.5CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MSMLJ8.5CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO- |