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MSD1328-RT1G PDF预览

MSD1328-RT1G

更新时间: 2024-09-19 13:11:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 116K
描述
NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL

MSD1328-RT1G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:SC-59包装说明:LEAD FREE, CASE 318D-04, SC-59, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.2
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MSD1328-RT1G 数据手册

 浏览型号MSD1328-RT1G的Datasheet PDF文件第2页浏览型号MSD1328-RT1G的Datasheet PDF文件第3页浏览型号MSD1328-RT1G的Datasheet PDF文件第4页 
Order this document  
by MSD1328–RT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
COLLECTOR  
3
3
2
1
2
1
BASE  
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
CASE 318D–03, STYLE 1  
SC–59  
Rating  
Collector–Base Voltage  
Symbol  
Value  
Unit  
Vdc  
V
V
25  
20  
(BR)CBO  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Vdc  
(BR)CEO  
V
12  
Vdc  
(BR)EBO  
Collector Current — Continuous  
Collector Current — Peak  
I
500  
1000  
mAdc  
mAdc  
C
I
C(P)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
V
20  
Vdc  
Vdc  
Vdc  
µAdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 1.0 mAdc, I = 0)  
C
B
Collector–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
V
V
25  
12  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
E
E
Collector–Base Cutoff Current  
(V = 25 Vdc, I = 0)  
I
0.1  
350  
CBO  
CB  
DC Current Gain  
(V = 2.0 Vdc, I = 500 mAdc)  
E
(1)  
h
FE  
200  
CE  
C
Collector–Emitter Saturation Voltage (I = 500 mAdc, I = 20 mAdc)  
V
0.4  
1.2  
Vdc  
Vdc  
C
B
CE(sat)  
V
BE(sat)  
Base–Emitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc)  
C
B
1. Pulse Test: Pulse Width 300 µs, D.C. 2%.  
DEVICE MARKING  
Marking Symbol  
1DRX  
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month  
in which the part was manufactured.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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