MSC2295-BT1G

更新时间： 2024-01-24 06:11:41

品牌	Logo	应用领域
安森美 - ONSEMI		晶体射频放大器晶体管
页数	文件大小	规格书
2页	41K
描述
NPN RF Amplifier Transistors Surface Mount

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中文翻译

获取价格

数据手册

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MSC2295-BT1G 数据手册

MSC2295−BT1,

MSC2295−CT1

Preferred Device

NPN RF Amplifier

Transistors Surface Mount

Features

http://onsemi.com

• Pb−Free Packages are Available

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

Unit

Vdc

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

5.0

Vdc

BASE

EMITTER

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Power Dissipation

Symbol

Max

200

Unit

°C

SC−59

CASE 318D

Junction Temperature

Storage Temperature

150

stg

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

Vx M G

ELECTRICAL CHARACTERISTICS (T = 25°C)

Characteristic

Symbol

Min

Max

Unit

Collector−Base Cutoff Current

mAdc

CBO

Vx = Device Code

x= B or C

(V = 10 Vdc, I = 0)

−

0.1

= Date Code*

= Pb−Free Package

DC Current Gain (Note 1)

(V = 10 Vdc, I = −1.0 mAdc)

−

(Note: Microdot may be in either location)

MSC2295−BT1

MSC2295−CT1

110

140

220

*Date Code orientation may vary depending

upon manufacturing location.

Collector−Gain — Bandwidth Product

(V = 10 Vdc, I = −1.0 mAdc)

MHz

150

−

ORDERING INFORMATION

Reverse Transistor Capacitance

(V = 10 Vdc,

†

Device

Package

Shipping

1.5

= 1.0 mAdc, f = 10.7 MHz)

MSC2295−BT1

MSC2295−BT1G

SC−59

3000/Tape & Reel

1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

SC−59

(Pb−Free)

MSC2295−CT1

SC−59

3000/Tape & Reel

MSC2295−CT1G

SC−59

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MSC2295−BT1/D

中文翻译

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与MSC2295-BT1G相关器件

型号	品牌	获取价格	描述	数据表
MSC2295-BT3	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MSC2295CT1	MOTOROLA	获取价格	Transistor
MSC2295-CT1	MOTOROLA	获取价格	NPN RF Amplifier Transistors Surface Mount
MSC2295-CT1	ONSEMI	获取价格	NPN RF Amplifier Transistors Surface Mount
MSC2295-CT1	LRC	获取价格	NPN RF Amplifier Transistors Surface Mount
MSC2295-CT1	ETL	获取价格	NPN RF Amplifier Transistors Surface Mount
MSC2295-CT1G	ONSEMI	获取价格	NPN RF Amplifier Transistors Surface Mount
MSC2295-CT3	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MSC2302	MICROSEMI	获取价格	RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2302E3	MICROSEMI	获取价格	RF Power Bipolar Transistor, S Band, Silicon, NPN, S010

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