5秒后页面跳转
MSC2295-CT1 PDF预览

MSC2295-CT1

更新时间: 2024-02-13 09:51:47
品牌 Logo 应用领域
乐山 - LRC 晶体射频放大器晶体管
页数 文件大小 规格书
1页 41K
描述
NPN RF Amplifier Transistors Surface Mount

MSC2295-CT1 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SC-59包装说明:SC-59, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.18最大集电极电流 (IC):0.03 A
基于收集器的最大容量:1.5 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

MSC2295-CT1 数据手册

  
LESHAN RADIO COMPANY, LTD.  
NPN RF Amplifier Transistors  
Surface Mount  
MSC2295-BT1  
MSC2295-CT1  
COLLECTOR  
3
3
2
2
1
1
BASE  
EMITTER  
CASE 318D–03, STYLE1  
SC–59  
MAXIMUM RATINGS (TA = 25°C)  
Rating  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
20  
5.0  
30  
Vdc  
Vdc  
Collector Current - Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
mAdc  
Symbol  
P D  
Max  
200  
150  
Unit  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
T stg  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS(T A = 25°C)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector-Base Cutoff Current  
I CBO  
0.1  
µAdc  
(V CB = 10 Vdc, I E = 0)  
DC Current Gain (1)  
h FE  
(V CB = 10 Vdc, I C = –1.0 mAdc)  
MSC2295-BT1  
MSC2295-CT1  
70  
140  
220  
110  
150  
Collector-Gain - Bandwidth Product  
(V CB = 10 Vdc, IE = –1.0 mAdc)  
Reverse Transistor Capacitance  
f T  
MHz  
pF  
Cre  
1.5  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)  
1. Pulse Test: Pulse Width  
< 300 ms, D.C.< 2%.  
DEVICE MARKING  
Marking Symbol  
X
VB  
X
VC  
MSC2295-CT1  
MSC2295-BT1  
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month  
in which the part was manufactured.  
N4–1/1  

与MSC2295-CT1相关器件

型号 品牌 获取价格 描述 数据表
MSC2295-CT1G ONSEMI

获取价格

NPN RF Amplifier Transistors Surface Mount
MSC2295-CT3 MOTOROLA

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MSC2302 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2302E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2304 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2304E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2307 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2307E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC23108C OKI

获取价格

1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE
MSC23108C-60DS2 OKI

获取价格

Fast Page DRAM Module, 1MX8, 60ns, CMOS, SIMM-30