生命周期: | Obsolete | 零件包装代码: | SC-59 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.71 |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 110 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSC2302 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC2302E3 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC2304 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC2304E3 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC2307 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC2307E3 | MICROSEMI |
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RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 |
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MSC23108C | OKI |
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1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE |
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MSC23108C-60DS2 | OKI |
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Fast Page DRAM Module, 1MX8, 60ns, CMOS, SIMM-30 |
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MSC23108C-70DS2 | OKI |
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Fast Page DRAM Module, 1MX8, 70ns, CMOS, SIMM-30 |
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MSC23108CL-60DS2 | OKI |
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Fast Page DRAM Module, 1MX8, 60ns, CMOS, SIMM-30 |
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