5秒后页面跳转
MSC2295-CT3 PDF预览

MSC2295-CT3

更新时间: 2024-02-21 01:10:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 放大器光电二极管晶体管
页数 文件大小 规格书
32页 288K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

MSC2295-CT3 技术参数

生命周期:Obsolete零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
最大集电极电流 (IC):0.03 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):110最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

MSC2295-CT3 数据手册

 浏览型号MSC2295-CT3的Datasheet PDF文件第2页浏览型号MSC2295-CT3的Datasheet PDF文件第3页浏览型号MSC2295-CT3的Datasheet PDF文件第4页浏览型号MSC2295-CT3的Datasheet PDF文件第5页浏览型号MSC2295-CT3的Datasheet PDF文件第6页浏览型号MSC2295-CT3的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
Motorola Preferred Devices  
3
2
1
2
1
BASE  
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
30  
Unit  
CASE 318D–03, STYLE 1  
SC–59  
V
V
Vdc  
Vdc  
(BR)CBO  
Collector–Emitter Voltage  
Emitter–Base Voltage  
20  
(BR)CEO  
V
5.0  
30  
Vdc  
(BR)EBO  
Collector Current — Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
150  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
T
stg  
55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Base Cutoff Current  
I
0.1  
µAdc  
CBO  
(V  
CB  
= 10 Vdc, I = 0)  
E
(1)  
DC Current Gain  
(V = 10 Vdc, I = –1.0 mAdc)  
h
FE  
MSC2295–BT1  
MSC2295–CT1  
70  
110  
140  
220  
CB  
C
Collector–Gain — Bandwidth Product  
(V = 10 Vdc, I = –1.0 mAdc)  
f
150  
MHz  
pF  
T
CB  
Reverse Transistor Capacitance  
(V = 10 Vdc, I = 1.0 mAdc, f = 10.7 MHz)  
E
C
1.5  
re  
CE  
C
1. Pulse Test: Pulse Width 300 µs, D.C. 2%.  
DEVICE MARKING  
Marking Symbol  
VBX  
VCX  
MSC2295–BT1  
MSC2295–CT1  
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month  
in which the part was manufactured.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–723  

与MSC2295-CT3相关器件

型号 品牌 获取价格 描述 数据表
MSC2302 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2302E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2304 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2304E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2307 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC2307E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC23108C OKI

获取价格

1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE
MSC23108C-60DS2 OKI

获取价格

Fast Page DRAM Module, 1MX8, 60ns, CMOS, SIMM-30
MSC23108C-70DS2 OKI

获取价格

Fast Page DRAM Module, 1MX8, 70ns, CMOS, SIMM-30
MSC23108CL-60DS2 OKI

获取价格

Fast Page DRAM Module, 1MX8, 60ns, CMOS, SIMM-30