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MSBR3502 PDF预览

MSBR3502

更新时间: 2024-02-26 00:57:36
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
4页 484K
描述
Silicon Passivated 3 Phase Bridge Rectifiers

MSBR3502 数据手册

 浏览型号MSBR3502的Datasheet PDF文件第2页浏览型号MSBR3502的Datasheet PDF文件第3页浏览型号MSBR3502的Datasheet PDF文件第4页 
www.hygroup.com.tw  
MSBR35 SERIES  
Reverse Voltage 50- 1600 Volts  
Silicon Passivated 3 Phase Bridge  
Rectifiers  
Forward Current - 35 Amperes  
Features  
Low forward voltage drop  
MSBR  
High current capability  
RoHS  
COMPLIANT  
High reliability  
Meet UL flammability classification 94V-0  
Mechanical Data  
Case: Epoxy case with heat sink  
Polarity: Symbol marked on body  
Mounting position:  
Bolt pass through the mounting hole of body  
then fix to heat sink  
Mounting torque: 2 N.m  
Note: Products with logo  
or  
are made by HY Electronic (Cayman) Limited.  
Applications  
For use in high power supply inverters,servo  
motor and welding machine applications  
Package Outline Dimensions in Inches (Millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MSBR MSBR MSBR MSBR MSBR MSBR MSBR MSBR MSBR MSBR  
3500 3501 3502 3504 3506 3508 3510 3512 3514 3516  
Characteristics  
Symbol  
Unit  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
75  
100  
70  
200  
140  
200  
275  
400  
280  
400  
500  
600  
420  
600  
725  
800  
560  
800  
900  
1000 1200 1400 1600  
700 840 980 1120  
V
V
V
V
A
Maximum DC Blocking Voltage  
100  
150  
1000 1200 1400 1600  
1100 1300 1500 1700  
Peak Non-Repetitive Reverse Voltage  
VRSM  
I(AV)  
35  
Maximum Average Forward Rectified Current @TC=60  
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,  
Superimposed on Rated Load (JEDEC Method)  
500  
A
IFSM  
I2t Rating for Fusing (t<8.3mS)  
A2S  
V
I2 t  
VF  
1030  
1.2  
Peak Forward Voltage per Diode at 17.5A DC  
Maximum DC Reverse Current at Rated @TJ=25℃  
DC Blocking Voltage per Diode @TJ=125℃  
Typical Thermal Resistance Junction to Case per Diode  
Typical Thermal Resistance Case to Heatsink per Diode  
RMS lsolation Voltage from Case to Lead  
Operating Junction Temperature Range  
Storage Temperature Range  
10  
μA  
IR  
5.0  
mA  
/W  
/W  
V
1.16  
RθJC  
RθCS  
VISO  
TJ  
0.2  
2500  
-55 to +150  
-55 to +150  
TSTG  
Note: The typical data above is for reference only .  
MSBR35*-B-00-00  
Rev. 11, 18-May-2020  

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