Datasheet > MSA1022-CT1

MSA1022-CT1

更新时间： 2024-11-25 04:14:35

品牌	Logo	应用领域
ETL		晶体射频放大器晶体管光电二极管
页数	文件大小	规格书
1页	78K
描述
PNP RF Amplifier Transistor Surface Mount

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数据手册

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MSA1022-CT1 数据手册

PNP RF Amplifier Transistor

Surface Mount

MSA1022–CT1

COLLECTOR

CASE 318D–03, STYLE1

SC–59

BASE

EMITTER

MAXIMUM RATINGS (T = 25 °C)

Rating

Symbol

V _CBO

Value

–30

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

THERMAL CHARACTERISTICS

Characteristic

V _CEO

–20

–5.0

–30

EBO

I _C

mAdc

Symbol

P_D

Max

200

Unit

°C

Power Dissipation

Junction Temperature

Storage Temperature

T _J

150

T_stg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C)

Characteristic

Symbo

lMin

Max

Unit

Collector Cutoff Current

I _CBO

—

–0.1

µAdc

(V _CB= –10 Vdc, I _E= 0)

Collector-Emitter Breakdown Voltage

(V _CE= –20 Vdc, I _B= 0)

I _CEO

I _EBO

h _FE

—

–100

–10

220

—

µAdc

—

Emitter-Base Breakdown Voltage

(V _EB= –5.0 Vdc, I _C= 0)

DC Current Gain (1)

110

150

(V _CE= –10 Vdc, I _C= –1.0 mAdc)

Current-Gain - Bandwidth Product

(V _CB= –10 Vdc, I _E= 1.0 mAdc)

MHz

1. Pulse Test: Pulse Width

< 300 µs, D.C. < 2%.

DEVICE MARKING

Marking Symbol

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

N1–1/1

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