MSA-1120

更新时间： 2024-11-24 22:45:59

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
4页	52K
描述
Cascadable Silicon Bipolar MMIC Amplifier

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中文翻译

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技术参数
数据手册

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MSA-1120 技术参数

生命周期：	Transferred	包装说明：	SL,4LEAD,.2CIRC
Reach Compliance Code：	unknown	风险等级：	5.15
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	11.5 dB	最大输入功率 (CW)：	13 dBm
安装特点：	SURFACE MOUNT	端子数量：	4
最大工作频率：	1600 MHz	最小工作频率：	50 MHz
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装主体材料：	METAL	封装等效代码：	SL,4LEAD,.2CIRC
电源：	5.5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	80 mA
表面贴装：	YES	技术：	BIPOLAR
最大电压驻波比：	1.9	Base Number Matches：	1

MSA-1120 数据手册

Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-1120

disk package for good thermal

Features

200 mil BeO Package

characteristics. This MMIC is

designed for high dynamic range

in either 50 or 75 Ω systems by

combining low noise figure with

• High Dynamic Range

Cascadable50 Ω or75 Ω

Gain Block

• 3 dBBandwidth:

high IP . Typical applications

50 MHzto1.6 GHz

include narrow and broadband

linear amplifiers in industrial and

military systems.

• 17.5 dBm Typical P_{1 dB}at

0.5 GHz

• 12 dB Typical 50 Ω Gain at

The MSA-series is fabricated using

0.5 GHz

HP’s10GHzf ,25 GHzf

MAX

• 3.5 dB Typical Noise Figure

at0.5 GHz

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

• Hermetic Metal/Beryllia

Microstrip Package

Description

The MSA-1120 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a hermetic BeO

Typical Biasing Configuration

bias

V_CC

> 8 V

RFC (Optional)

block

MSA

OUT

= 5.5 V

5965-9559E

6-466

12 3 4

中文翻译

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