Datasheet > MS2322

MS2322

更新时间： 2024-11-23 20:26:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	89K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册
替代型号

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MS2322 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.82	Is Samacsys：	N
Base Number Matches：	1

MS2322 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2322

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

1025 - 1150 MHz

50 VOLT OPERATION

P_OUT= 15 WATTS

G_P= 10 dB MINIMUM

20:1 VSWR CAPABILITY @ RATED CONDITIONS

COMMON BASE CONFIGURATION

.280 4LSL (M115)

Epoxy Sealed

DESCRIPTION:

The MS2322 is a gold metallized, silicon NPN power transistor

designed for pulsed applications with low duty cycles such as

IFF, DME and TACAN. Internal impedance matching is utilized

for maximum broadband performance and simplified external

matching.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.5

1.5

P_DISS

T_J

Power Dissipation

Junction Temperature

Storage Temperature

87.5

+200

°C

T_STG

-65 to +150

Thermal Data

R_TH(J-C)

Thermal Resistance Junction-case

2.0

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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MS2322 替代型号

型号	品牌	替代类型	描述	数据表
AVD015P	ASI	功能相似	NPN SILICON RF POWER TRANSISTOR

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