Datasheet > MS2344

MS2344

更新时间： 2024-11-23 21:21:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	111K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MS2344 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

MS2344 数据手册

MS2344

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

•

1025 - 1150 MHz

GOLD METALIZATION

_OUT= 25 WATTS

G_P= 9.0 dB MINIMUM

INTERNAL INPUT MATCHING

INFINITE VSWR CAPABILITY @ RATED CONDITIONS

COMMON BASE CONFIGURATION

DESCRIPTION:

The MS2344 is a gold metalized silicon, NPN power transistor

designed for applications requiring high peak power and low

duty cycles such as IFF, DME, and TACAN. The MS2344 utilizes

internal impedance matching for improved broadband

performance and low thermal resistance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.5

2.6

87.5

200

°C

P_DISS

T_J

Power Dissipation

Junction Temperature

Storage Temperature

T_STG

-65 to +150

Thermal Data

R_TH(J-C)

Thermal Resistance Junction-case

2.0

°C/W

053-7123 Rev - 11-2002

12 3

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