Datasheet > MS2341

MS2341

更新时间： 2024-11-26 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波电子放大器航空
页数	文件大小	规格书
3页	94K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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数据手册

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MS2341 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2341

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

DESIGNED FOR HIGH POWER PULSED IFF, DME, AND

TACAN APPLICATIONS

40 W (typ.) IFF 1030–1090 MHz

35 W (min.) DME 1025–1150 MHz

25 W (typ.) TACAN 960–1215 MHz

960 - 1215 MHz

GOLD METALLIZATION

Pout = 25 W MINIMUM

Gp = 9.0 dB

INTERNAL INPUT MATCHING

INFINITE VSWR CAPABILITY @ RATED CONDITIONS

COMMON BASE CONFIGURATION

DESCRIPTION:

The MS2341 is a gold metallized silicon, NPN power transistor

designed for applications requiring high peak power and low duty

cycles such as IFF, DME, and TACAN. The MS2341 utilizes internal

impedance matching for improved broadband performance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CBO

V_CES

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.5

2.6

P_DISS

T_J

Power Dissipation

87.5

200

Junction Temperature

ºC

Storage Temperature

T_STG

-65 to +150

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance

2.0

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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