Datasheet > MS2206

MS2206

更新时间： 2024-11-18 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波电子航空
页数	文件大小	规格书
3页	93K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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数据手册

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MS2206 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2206

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

1025-1150 MHz

GOLD METALLIZATION

INFINITE VSWR CAPABILITY @ RATED CONDITIONS

Pout = 4 W MINIMUM

G_P= 10 dB

.280 4LSL (M115)

Epoxy Sealed

COMMON BASE CONFIGURATION

DESCRIPTION:

The MS2206 is a common base, silicon NPN microwave transistor

designed for Class C driver applications under DME or IFF pulse

conditions. This device is capable of withstanding an infinite load

VSWR at any phase angle under rated conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

Parameter

Value

7.5

Unit

Power Dissipation

V_CE

Collector-Emitter Bias Voltage

Junction Temperature

Device Current

T_J

I_C

200

1.0

ºC

T_STG

Storage Temperature

-65 to +200

ºC

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance*

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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