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MS2211 PDF预览

MS2211

更新时间: 2024-11-21 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波电子航空
页数 文件大小 规格书
4页 181K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2211 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, S-CDFM-F2
Reach Compliance Code:unknown风险等级:5.64
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):0.9 A配置:SINGLE
最高频带:L BANDJESD-30 代码:S-CDFM-F2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MS2211 数据手册

 浏览型号MS2211的Datasheet PDF文件第2页浏览型号MS2211的Datasheet PDF文件第3页浏览型号MS2211的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS2211  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
Features  
·
·
·
·
·
960-1215 MHz  
COMMON BASE  
GOLD METALLIZATION  
POUT = 6 W MIN. WITH 9.3 dB GAIN  
5:1 VSWR CAPABILITY  
DESCRIPTION:  
The MS2211 is a silicon NPN bipolar device designed  
For specialized avionics applications, including JTIDS, utilizing pulse  
formats with short pulse widths and high burst rates or overall duty  
cycles.  
The MS2211 is housed in a hermetic package and utilizes internal  
input impedance matching. Gold metallization and emitter ballasting  
assures high reliability under operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
PDISS  
IC  
Parameter  
Power Dissipation* (TC £ 75°C)  
Device Current*  
Value  
25  
Unit  
W
0.9  
A
VCC  
Collector-Supply Voltage  
32  
V
TJ  
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
+250  
°C  
°C  
TSTG  
-65 to +200  
Thermal Data  
RTH(J-C)  
Junction-case Thermal Resistance*  
7.0  
°C/W  
* Applies only to rated RF amplifier operation  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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