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MS2207 PDF预览

MS2207

更新时间: 2024-11-17 21:55:47
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波电子航空
页数 文件大小 规格书
3页 116K
描述
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

MS2207 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknown风险等级:5.63
外壳连接:BASE最大集电极电流 (IC):24 A
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MS2207 数据手册

 浏览型号MS2207的Datasheet PDF文件第2页浏览型号MS2207的Datasheet PDF文件第3页 
MS2207  
RF & MICROWAVE TRANSISTORS  
L-BAND AVIONICS APPLICATIONS  
Features  
1090 MHz  
50 VOLTS  
15:1 VSWR CAPABILITY  
INPUT / OUTPUT MATCHING  
P
OUT = 400 WATTS  
GP = 8.0 dB MINIMUM  
COMMON BASE CONFIGURATION  
DESCRIPTION:  
The MS2207 is a high power NPN bipolar transistor  
specifically designed for TCAS and Mode-S driver  
applications. This device is designed for operation  
under moderate pulse width and duty cycle pulse  
conditions and is capable of withstanding 15:1 output  
VSWR at rated conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
PDISS  
Parameter  
Value  
880  
Unit  
W
Power Dissipation  
Device Current  
IC  
VCC  
TJ  
24  
A
Collector Supply Voltage  
Junction Temperature  
Storage Temperature  
55  
200  
-65 to +200  
V
°C  
°C  
TSTG  
Thermal Data  
RTH(J-C)  
Junction-case Thermal Resistance  
0.17  
°C/W  
053-7113 Rev - 11-2002  

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