Datasheet > MS2210

MS2210

更新时间： 2024-11-17 21:54:27

品牌	Logo	应用领域
ADPOW		晶体射频和微波晶体管电子航空
页数	文件大小	规格书
3页	100K
描述
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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中文翻译

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技术参数
数据手册

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MS2210 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	外壳连接：	BASE
最大集电极电流 (IC)：	24 A	集电极-发射极最大电压：	50 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON

MS2210 数据手册

MS2210

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

255 MHz BANDWIDTH

GOLD METALLIZATION

EMITTER SITE BALLASTED

Pout = 300W MINIMUM

Gp = 7.0 dB

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

15:1 VSWR CAPABILITY

DESCRIPTION:

The MS2210 avionics power transistor is a broadband, high peak

pulse power device specifically designed for avionics applications

requiring broad bandwidth with moderate duty cycle and pulse width

constraints such as ground/ship DME/TACAN. The MS2210 is also

designed for specialized applications where reduced power is

provided under pulse formats utilizing short pulse widths and high

burst or overall duty cycles

This device is capable of withstanding 15:1 VSWR mismatch load

conditions at any phase angle under full rated conditions.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C)

Symbol

P_DISS

I_C

Parameter

Value

940

Unit

Power Dissipation*

Device Current*

V_CC

T_J

T_STG

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

+200

- 65 to + 200

°C

Thermal Data

R_TH(j-c)

Junction-Case Thermal Resistance*

0.16

°C/W

Applies only to rated RF operation.

MS2210.PDF 4-15-03

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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