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MS2209_08 PDF预览

MS2209_08

更新时间: 2024-11-21 10:46:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波电子航空
页数 文件大小 规格书
4页 113K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2209_08 数据手册

 浏览型号MS2209_08的Datasheet PDF文件第2页浏览型号MS2209_08的Datasheet PDF文件第3页浏览型号MS2209_08的Datasheet PDF文件第4页 
MS2209  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
Features  
225 MHz BANDWIDTH  
COMMON BASE  
GOLD METALLIZATION  
CLASS C OPERATION  
POUT = 90 W MIN. WITH 8.4 dB GAIN  
DESCRIPTION:  
The MS2209 is a broadband, high peak pulse power silicon NPN  
bipolar device specifically designed for avionics applications requiring  
broad bandwidth with moderate duty cycles and pulse width  
constraints such as ground/ship based DME/TACAN.  
This device is also designed for specialized applications including  
JTIDS applications when duty cycle is moderately higher. Gold  
metallization and emitter ballasting assure high reliability under Class  
C amplifier operation.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
Parameter  
Value  
50  
Unit  
V
VCC  
Collector Supply Voltage  
IC  
Device Current  
7.0  
A
PDISS  
TJ  
Power Dissipation  
220  
W
Junction Temperature (RF Pulsed Operation)  
Storage Temperature  
+200  
°C  
°C  
TSTG  
-65 to +200  
Thermal Data  
RTH(J-C)  
Junction-case Thermal Resistance  
0.80  
°C/W  
Rev B- September 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi.com or contact our factory direct.  

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