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MS20 PDF预览

MS20

更新时间: 2024-09-10 12:01:51
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX 半导体电容器
页数 文件大小 规格书
2页 178K
描述
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor

MS20 数据手册

 浏览型号MS20的Datasheet PDF文件第2页 
MIS/MOS Single Layer Capacitors  
Metal Insulator Semiconductor/Metal Oxide Semiconductor  
For applications in RF, Microwave and GHz ranges, AVX  
offers MIS/MOS Capacitors. These are Single Layer  
Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to  
produce small, high Q, temperature stable, high break down  
voltage, low leakage capacitors. To ease assembly, AVX  
offers a wide range of termination styles for epoxy or solder  
die attach and subsequent Gold or Aluminum wire thermoson-  
ic and ultrasonic bonding. Custom applications and designs  
are welcome. Please contact your local representative.  
BENEFITS  
• MIS, SiON dielectric up to 100V applications  
• MOS, SiO2 dielectric up to 50V applications  
• Sizes as small as 10 mils (254µm) squared  
• DC to GHz operation  
• High Q, low leakage  
HOW TO ORDER  
MS  
20  
3
S
100  
M
3723  
W
Series  
Code  
MS = MOS  
MI = MIS  
Case Size  
Square size  
in mils  
10, 20, 30, 40  
OS = Special  
order please  
supply design  
Working  
Voltage  
Dielectric Code  
Capacitance  
EIA Capacitance  
Code in pF.  
Capacitance  
Tolerance  
F = 1%  
J = 5%  
K = 10%  
M = 20%  
Termination Code  
1st position top layer  
2nd position top bonding layer  
3rd position bottom bonding layer  
4th position bottom layer  
Packaging  
W = Antistatic  
Waffle Pack  
T = Tested Whole  
Wafer  
D = Tested Wafer  
Diced on  
S = SiO  
2
for MOS  
2 = 2 WVDC  
4 = 4 WVDC  
Z = 10 WVDC  
3 = 25 WVDC  
5 = 50 WVDC  
S = Special  
Order  
Style ONLY  
N = SiON for MIS  
Style ONLY  
First two digits =  
significant figures or  
“R” for decimal place.  
1 = AI  
2 = Cr  
3 = Au  
4 = Ni  
5 = Pd  
6 = Ta  
7 = TaN  
8 = TiW  
9 = TiWNi  
Third digit = number  
of zeros or after “R”  
significant figures.  
Tape  
OSOS = Special Order  
Please Supply Design  
TYPICAL ELECTRICAL SPECIFICATIONS  
TEST METHODS  
Specification  
Parameter  
Method of Paragraph  
Material  
MIS (SiON)  
150  
MOS (SiO2)  
85  
2
MIL-STD-883  
Bond Strength  
Shear Strength  
Life  
2011.7  
2019  
108  
pF /mm Typical  
MIL-STD-883  
MIL-STD-202  
TCC  
Rated Voltage  
Peak Voltage at +25ºC  
DF  
60 ppm/ºC  
100  
1.5x Rated  
0.1%  
30 ppm/ºC  
50  
1.5x Rated  
0.1%  
Voltage Stability  
Frequency Range  
Independent  
40 GHz  
Independent  
40 GHz  
SPECIFIC CAPACITANCE (pF/mm2) VERSUS RATED VOLTAGE  
MIS \ MOS Specific Capacitance vs Rated Voltage  
140  
120  
100  
80  
MOS  
60  
MIS  
40  
20  
0
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
Rated Voltage (V)  

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