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MRT100KP110AE3 PDF预览

MRT100KP110AE3

更新时间: 2024-11-16 14:30:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 427K
描述
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

MRT100KP110AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.51其他特性:HIGH RELIABILITY
最大击穿电压:135 V最小击穿电压:122 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ARJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:7 W参考标准:MIL-19500
最大重复峰值反向电压:110 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MRT100KP110AE3 数据手册

 浏览型号MRT100KP110AE3的Datasheet PDF文件第2页浏览型号MRT100KP110AE3的Datasheet PDF文件第3页浏览型号MRT100KP110AE3的Datasheet PDF文件第4页浏览型号MRT100KP110AE3的Datasheet PDF文件第5页浏览型号MRT100KP110AE3的Datasheet PDF文件第6页浏览型号MRT100KP110AE3的Datasheet PDF文件第7页 

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