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MRT100KP120CAE3 PDF预览

MRT100KP120CAE3

更新时间: 2024-11-16 14:30:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 427K
描述
Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

MRT100KP120CAE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.52
Is Samacsys:N其他特性:HIGH RELIABILITY
最大击穿电压:147 V最小击穿电压:133 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ARJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:7 W参考标准:MIL-19500
最大重复峰值反向电压:120 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MRT100KP120CAE3 数据手册

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