5秒后页面跳转
捷配首页

Datasheet > 二极管 > 瞬态抑制器> MRT100KP110AE3/TR
MRT100KP110AE3/TR PDF预览

MRT100KP110AE3/TR

更新时间： 2024-11-17 09:16:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管瞬态抑制器
页数 文件大小 规格书
5页 260K
描述
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

阅读下载

中文翻译

获取价格

MRT100KP110AE3/TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.8其他特性：HIGH RELIABILITY
最大击穿电压：135 V最小击穿电压：122 V
击穿电压标称值：128.5 V外壳连接：ISOLATED
最大钳位电压：178 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：100000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
认证状态：Not Qualified最大重复峰值反向电压：110 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MRT100KP110AE3/TR 数据手册

 浏览型号MRT100KP110AE3/TR的Datasheet PDF文件第2页浏览型号MRT100KP110AE3/TR的Datasheet PDF文件第3页浏览型号MRT100KP110AE3/TR的Datasheet PDF文件第4页浏览型号MRT100KP110AE3/TR的Datasheet PDF文件第5页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Unidirectional and Bidirectional  
Transient Voltage Suppressor  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 40 to 400 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MRT100KP40A thru MRT100KP400CA, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 100 kW @ 6.4/69 µs  
Fast response with less than 5ns turn-on time  
Preferred 100kW TVS for aircraft power bus protection  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 5A  
APPLICATIONS / BENEFITS  
.
Protection from high power switching transients, induced RF, and lightning threats with  
comparatively small package size (0.25 inch diameter)  
.
.
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all  
devices  
.
.
.
.
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device  
types MRT100KP33A or CA up to MRT100KP260A or CA  
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all  
devices  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on  
device types MRT100KP33A or CA up to MRT100KP64A or CA  
Consult Factory for other voltages with similar Peak Pulse Power capabilities  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1  
and 2)  
impulse repetition rate (duty factor) of 0.005 %  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 °C  
Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1 oz ) and track width 1 mm, length 25  
mm  
.
Steady-state power dissipation: 7 Watts @ TL = 27.5 °C or 1.61 Watts at TA = 25 °C when  
mounted on FR4 PC Board described above for thermal resistance  
.
.
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01012 Rev A, August 2010  
High Reliability Product Group  
Page 1 of 5  
12345

中文翻译

下载PDF

与MRT100KP110AE3/TR相关器件

型号 品牌 获取价格 描述 数据表
MRT100KP110AE3TR MICROSEMI

获取价格

 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MRT100KP110ATR MICROSEMI

获取价格

 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 5A, 2 PIN
MRT100KP110CA/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, P
MRT100KP110CAE3TR MICROSEMI

获取价格

 		100000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MRT100KP110CATR MICROSEMI

获取价格

 		100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 5A, 2 PIN
MRT100KP120AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Unidirectional, 1 Element, Silicon,
MRT100KP120AE3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Unidirectional, 1 Element, Silicon,
MRT100KP120AE3TR MICROSEMI

获取价格

 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MRT100KP120CA/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, P
MRT100KP120CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, D

与MRT100KP110AE3/TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证