Datasheet > MRF6V4300NR1

MRF6V4300NR1

更新时间： 2024-11-17 04:14:39

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6V4300NR1 数据手册

Document Number: MRF6V4300N

Rev. 0, 7/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6V4300NR1

MRF6V4300NBR1

Designed primarily for CW large-signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

• Typical CW Performance: V_DD= 50 Volts, I_DQ= 900 mA, P_out= 300 Watts,

f = 450 MHz

Power Gain — 22 dB

Drain Efficiency — 60%

10-600 MHz, 300 W, 50 V

LATERAL N-CHANNEL

SINGLE-ENDED

BROADBAND

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW

Output Power

Features

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• Excellent Thermal Stability

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 200°C Capable Plastic Package

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6V4300NR1

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6V4300NBR1

PARTS ARE SINGLE-ENDED

RF /V

in GS

RF /V

out DS

RF /V

in GS

RF /V

out DS

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +110

-6.0, +10

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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与MRF6V4300NR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6V4300NR1_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V4300NR5	NXP	获取价格	Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
MRF6VP11KGSR5	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6VP11KHR5	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6VP11KHR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP11KHR6_09	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP11KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6VP121KHR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP121KHSR5	NXP	获取价格	RF POWER, FET
MRF6VP121KHSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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