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MR856G PDF预览

MR856G

更新时间: 2024-11-01 03:48:27
品牌 Logo 应用领域
DAESAN 二极管功效PC
页数 文件大小 规格书
2页 209K
描述
CURRENT 3.0 AMPERES VOLTAGE 50 TO 600 VOLTS

MR856G 数据手册

 浏览型号MR856G的Datasheet PDF文件第2页 
CURRENT 3.0 Amperes  
VOLTAGE 50 to 600 Volts  
MR850G THRU MR856G  
Features  
· Plastic package has Underwrites Laboratory Flammability  
Classification 94V-0  
· Fast switching high efficiency  
DO-201AD  
· Glass passivated junction  
· High current capability  
· High temperature soldering guaranteed:250/10 seconds,  
0.375"(9.5mm) lead length, 5 lbs.(2.3kg) tension.  
0.210(5.3)  
0.188(4.8)  
1.0(25.4)  
DIA.  
MIN.  
0.375(9.5)  
0.285(7.2)  
Mechanical Data  
1.0(25.4)  
MIN.  
· Case : JEDEC DO-201AD molded plastic body  
· Terminals : Plated axial lead solderable per MIL-STD-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
0.042(1.1)  
0.037(0.9)  
DIA.  
Dimensions in inches and (millimeters)  
· Weight : 0.041 ounce, 1.18 grams  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Symbols  
MR850G MR851G  
MR852G MR854G  
Units  
MR856G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
Volts  
Volts  
Volts  
600  
420  
600  
V
Maximum DC blocking voltage  
V
DC  
100  
Maximum average forward rectified current  
R load at TA=90℃  
I(AV)  
3.0  
Amps  
Peak forward surge current 10ms single half  
sine-wave superimposed on rated load at  
(JEDEC method)  
I
FSM  
100.0  
Amps  
Volts  
μA  
Maximum instantaneous forward voltage  
at 3.0A  
V
F
1.25  
5.0  
Maximum DC reverse  
current at rated DC  
blocking voltage  
T
T
A
=25℃  
IR  
A=125℃  
100  
150  
30  
Maximum reverse recovery time (Note 1)  
Max.thermal resistance  
Trr  
ns  
/W  
pF  
R
θJA  
CJ  
Typical junction capacitance (Note 2)  
25.0  
Operating junction and storage  
temperature range  
T
J
-65 to +175  
T
STG  
Notes:  
(1) Test conditions: I  
F=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  

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