MR858

更新时间： 2024-10-31 22:45:59

品牌	Logo	应用领域
EIC		整流二极管快速恢复二极管
页数	文件大小	规格书
2页	50K
描述
FAST RECOVERY RECTIFIER DIODES

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中文翻译

获取价格

数据手册

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MR858 数据手册

FAST RECOVERY

RECTIFIER DIODES

MR850 - MR858

PRV : 50 - 600 Volts

Io : 3.0 Amperes

DO-201AD

FEATURES :

1.00 (25.4)

0.21 (5.33)

MIN.

* High current capability

* High surge current capability

* High reliability

0.19 (4.82)

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

0.375 (9.52)

0.285 (7.24)

1.00 (25.4)

0.052 (1.32)

0.048 (1.22)

MIN.

MECHANICAL DATA :

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.16 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL MR850 MR851 MR852 MR854 MR856 MR858 UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

IF(AV)

3.0

0.375"(9.5mm) Lead Length

Peak Forward Surge Current,

Ta = 90 °C

IFSM

100

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Peak Forward Voltage at IF = 3.0 A

1.25

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

IR(H)

Trr

150

Ta = 100 °C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

- 65 to + 150

°C

Storage Temperature Range

TSTG

Notes :

( 1 ) Reverse Recovery Test Conditions : I_F= 0.5 A, I_R= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V_DC

Page 1 of 2

Rev. 01 : April 2, 2002

中文翻译

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与MR858相关器件

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MR858-B	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
MR858-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
MR858-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
MR858-T/R	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
MR860	MOTOROLA	获取价格	Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-5,
MR862	MOTOROLA	获取价格	40A, 200V, SILICON, RECTIFIER DIODE, DO-5
MR864	MOTOROLA	获取价格	40A, 400V, SILICON, RECTIFIER DIODE, DO-5
MR870	MOTOROLA	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, DO-5,
MR871	MOTOROLA	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon, DO-5,
MR872	MOTOROLA	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-5,