Datasheet > MR2A08A

MR2A08A

更新时间： 2024-01-30 12:53:03

品牌	Logo	应用领域
EVERSPIN		/
页数	文件大小	规格书
15页	901K
描述
512K x 8 MRAM Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MR2A08A 数据手册

MR2A08A

512K x 8 MRAM Memory

FEATURES

• Fast 35ns Read/Write Cycle

• SRAM Compatible Timing, Uses Existing SRAM Controllers Without

Redesign

• Unlimited Read & Write Endurance

• Data Always Non-volatile for >20 years at Temperature

• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

System for Simpler, More Eﬃcient Design

• Replace battery-backed SRAM solutions with MRAM to eliminate

battery assembly, improving reliability

• 3.3 Volt Power Supply

• Automatic Data Protection on Power Loss

• Commercial, Industrial, Automotive Temperatures

• RoHS-Compliant SRAM TSOP2 Package

• RoHS-Compliant SRAM BGA Package

• AEC-Q100 Grade 1 Qualiﬁed

RoHS

INTRODUCTION

The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as

524,288 words of 8 bits. The MR2A08A oﬀers SRAM compatible 35ns read/write timing with unlimited

endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power

loss by low-voltage inhibit circuitry to prevent writes with voltage out of speciﬁcation.

The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve criti-

cal data and programs quickly.

The MR2A08A is available in a small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package

or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are

compatible with similar low-power SRAM products and other non-volatile RAM products.

The MR2A08A provides highly reliable data storage over a wide range of temperatures. The product is of-

fered with commercial temperature range (0 to +70 °C), industrial temperature range (-40 to +85 °C), and

AEC-Q100 Grade 1 temperature range (-40 to +125 °C) options.

CONTENTS

1. DEVICE PIN ASSIGNMENT......................................................................... 2

2. ELECTRICAL SPECIFICATIONS................................................................. 4

3. TIMING SPECIFICATIONS.......................................................................... 7

4. ORDERING INFORMATION....................................................................... 11

5. MECHANICAL DRAWING.......................................................................... 12

6. REVISION HISTORY...................................................................................... 14

How to Reach Us.......................................................................................... 14

MR2A08A Rev. 6.3, 3/2018

12 3 4 5 6 7...15

中文翻译

下载PDF

与MR2A08A相关器件

型号	品牌	获取价格	描述	数据表
MR2A08ACMA35	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08ACMA35R	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08ACTS35C	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A08ACYS35	FREESCALE	获取价格	64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A08ACYS35	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08ACYS35	NXP	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR2A08ACYS35R	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08AMA35	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08AMA35R	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A08AMYS35	EVERSPIN	获取价格	512K x 8 MRAM Memory

与MR2A08A相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

5
高压电解电容的分类与选型策略
2024-06-28

6
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

12

产品中心

服务支持

精选活动

关于我们

帮助中心

MR2A08A

MR2A08A 数据手册

与MR2A08A相关器件

与MR2A08A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MR2A08A

MR2A08A 数据手册

与MR2A08A相关器件

与MR2A08A相关文章

您还可以找

您在本页遇到什么问题？