Datasheet > MR2A08AYS35

MR2A08AYS35

更新时间： 2024-09-25 02:55:11

品牌	Logo	应用领域
EVERSPIN		/
页数	文件大小	规格书
15页	901K
描述
512K x 8 MRAM Memory

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数据手册
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MR2A08AYS35 数据手册

MR2A08A

512K x 8 MRAM Memory

FEATURES

• Fast 35ns Read/Write Cycle

• SRAM Compatible Timing, Uses Existing SRAM Controllers Without

Redesign

• Unlimited Read & Write Endurance

• Data Always Non-volatile for >20 years at Temperature

• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

System for Simpler, More Eﬃcient Design

• Replace battery-backed SRAM solutions with MRAM to eliminate

battery assembly, improving reliability

• 3.3 Volt Power Supply

• Automatic Data Protection on Power Loss

• Commercial, Industrial, Automotive Temperatures

• RoHS-Compliant SRAM TSOP2 Package

• RoHS-Compliant SRAM BGA Package

• AEC-Q100 Grade 1 Qualiﬁed

RoHS

INTRODUCTION

The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as

524,288 words of 8 bits. The MR2A08A oﬀers SRAM compatible 35ns read/write timing with unlimited

endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power

loss by low-voltage inhibit circuitry to prevent writes with voltage out of speciﬁcation.

The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve criti-

cal data and programs quickly.

The MR2A08A is available in a small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package

or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are

compatible with similar low-power SRAM products and other non-volatile RAM products.

The MR2A08A provides highly reliable data storage over a wide range of temperatures. The product is of-

fered with commercial temperature range (0 to +70 °C), industrial temperature range (-40 to +85 °C), and

AEC-Q100 Grade 1 temperature range (-40 to +125 °C) options.

CONTENTS

1. DEVICE PIN ASSIGNMENT......................................................................... 2

2. ELECTRICAL SPECIFICATIONS................................................................. 4

3. TIMING SPECIFICATIONS.......................................................................... 7

4. ORDERING INFORMATION....................................................................... 11

5. MECHANICAL DRAWING.......................................................................... 12

6. REVISION HISTORY...................................................................................... 14

How to Reach Us.......................................................................................... 14

MR2A08A Rev. 6.3, 3/2018

12 3 4 5 6 7...15

中文翻译

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MR2A08AYS35 替代型号

型号	品牌	替代类型	描述	数据表
MR2A08ACYS35	EVERSPIN	类似代替	512K x 8 MRAM Memory
MR2A08AMYS35R	EVERSPIN	功能相似	512K x 8 MRAM Memory

与MR2A08AYS35相关器件

型号	品牌	获取价格	描述	数据表
MR2A08AYS35R	EVERSPIN	获取价格	512K x 8 MRAM Memory
MR2A16A	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16A_1	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16ACMA35	EVERSPIN	获取价格	256K x 16 MRAM Memory
MR2A16ACMA35R	EVERSPIN	获取价格	256K x 16 MRAM Memory
MR2A16ACTS35C	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16ACYS35	EVERSPIN	获取价格	256K x 16 MRAM Memory
MR2A16ACYS35	FREESCALE	获取价格	64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16ACYS35R	EVERSPIN	获取价格	256K x 16 MRAM Memory
MR2A16AMA35	EVERSPIN	获取价格	256K x 16 MRAM Memory

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