MR2A16A
256K x 16 MRAM Memory
FEATURES
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM control-
lers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
44-pin TSOP2
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
48-ball BGA
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
RoHS
INTRODUCTION
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-
nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and re-
trieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod-
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2018
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MR2A16A Rev. 11.3 3/2018