5秒后页面跳转
MR2A16AVMA35R PDF预览

MR2A16AVMA35R

更新时间: 2024-01-17 14:39:31
品牌 Logo 应用领域
EVERSPIN /
页数 文件大小 规格书
20页 1175K
描述
256K x 16 MRAM Memory

MR2A16AVMA35R 数据手册

 浏览型号MR2A16AVMA35R的Datasheet PDF文件第2页浏览型号MR2A16AVMA35R的Datasheet PDF文件第3页浏览型号MR2A16AVMA35R的Datasheet PDF文件第4页浏览型号MR2A16AVMA35R的Datasheet PDF文件第5页浏览型号MR2A16AVMA35R的Datasheet PDF文件第6页浏览型号MR2A16AVMA35R的Datasheet PDF文件第7页 
MR2A16A  
256K x 16 MRAM Memory  
FEATURES  
• Fast 35 ns Read/Write cycle  
• SRAM compatible timing, uses existing SRAM control-  
lers without redesign  
• Unlimited Read & Write endurance  
• Data non-volatile for >20 years at temperature  
• One memory replaces Flash, SRAM, EEPROM and  
BBSRAM in a system for simpler, more efficient design  
• Replaces battery-backed SRAM solutions with MRAM  
to improve reliability  
44-pin TSOP2  
• 3.3 volt power supply  
• Automatic data protection on power loss  
• Commercial, Industrial, Extended temperatures  
• AEC-Q100 Grade 1 option  
48-ball BGA  
• All products meet MSL-3 moisture sensitivity level  
• RoHS-compliant SRAM TSOP2 and BGA Packages  
RoHS  
INTRODUCTION  
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-  
nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing  
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-  
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of  
specification.  
The MR2A16A is the ideal memory solution for applications that must permanently store and re-  
trieve critical data and programs quickly.  
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin  
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM  
products and other nonvolatile RAM products.  
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod-  
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),  
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.  
Copyright © Everspin Technologies 2018  
1
MR2A16A Rev. 11.3 3/2018  

与MR2A16AVMA35R相关器件

型号 品牌 获取价格 描述 数据表
MR2A16AVTS35C FREESCALE

获取价格

256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16AVYS35 FREESCALE

获取价格

64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16AVYS35 EVERSPIN

获取价格

256K x 16 MRAM Memory
MR2A16AVYS35R EVERSPIN

获取价格

256K x 16 MRAM Memory
MR2A16AYS35 FREESCALE

获取价格

64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16AYS35 EVERSPIN

获取价格

256K x 16 MRAM Memory
MR2A16AYS35R EVERSPIN

获取价格

256K x 16 MRAM Memory
MR2A8ACYS35 NXP

获取价格

SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR2A8AVYS35 NXP

获取价格

SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR2A8AYS35 NXP

获取价格

SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44