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MPSH81D75Z PDF预览

MPSH81D75Z

更新时间: 2024-11-01 14:43:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
11页 721K
描述
VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92

MPSH81D75Z 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.85 pF
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):60最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:NOT APPLICABLE
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

MPSH81D75Z 数据手册

 浏览型号MPSH81D75Z的Datasheet PDF文件第2页浏览型号MPSH81D75Z的Datasheet PDF文件第3页浏览型号MPSH81D75Z的Datasheet PDF文件第4页浏览型号MPSH81D75Z的Datasheet PDF文件第5页浏览型号MPSH81D75Z的Datasheet PDF文件第6页浏览型号MPSH81D75Z的Datasheet PDF文件第7页 
MPSH81  
MMBTH81  
C
E
TO-92  
C
B
E
SOT-23  
Mark: 3D  
B
PNP RF Transistor  
This device is designed for general RF amplifier and mixer  
applications to 250 mHz with collector currents in the 1.0 mA  
to 30 mA range. Sourced from Process 75.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
20  
V
V
Collector-Base Voltage  
20  
3.0  
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
50  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSH81  
*MMBTH81  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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