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MPSH81RLRM PDF预览

MPSH81RLRM

更新时间: 2024-11-01 14:38:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
35页 318K
描述
TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP RF Small Signal

MPSH81RLRM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.28Is Samacsys:N
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:20 V
配置:SINGLEJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

MPSH81RLRM 数据手册

 浏览型号MPSH81RLRM的Datasheet PDF文件第2页浏览型号MPSH81RLRM的Datasheet PDF文件第3页浏览型号MPSH81RLRM的Datasheet PDF文件第4页浏览型号MPSH81RLRM的Datasheet PDF文件第5页浏览型号MPSH81RLRM的Datasheet PDF文件第6页浏览型号MPSH81RLRM的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
Motorola Preferred Device  
1
BASE  
2
EMITTER  
1
2
3
CASE 29–04, STYLE 2  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
–20  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–20  
–3.0  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.81  
mW  
mW/°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
R
357  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
–20  
–20  
–3.0  
Vdc  
Vdc  
(BR)CEO  
(I = –1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –10 Vdc, I = 0)  
I
–100  
–100  
nAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = –2.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–673  

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