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MPSA56RLRAG PDF预览

MPSA56RLRAG

更新时间: 2024-11-04 04:39:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
7页 90K
描述
Amplifier Transistors

MPSA56RLRAG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.2Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA56RLRAG 数据手册

 浏览型号MPSA56RLRAG的Datasheet PDF文件第2页浏览型号MPSA56RLRAG的Datasheet PDF文件第3页浏览型号MPSA56RLRAG的Datasheet PDF文件第4页浏览型号MPSA56RLRAG的Datasheet PDF文件第5页浏览型号MPSA56RLRAG的Datasheet PDF文件第6页浏览型号MPSA56RLRAG的Datasheet PDF文件第7页 
NPN − MPSA05, MPSA06*;  
PNP − MPSA55, MPSA56*  
*Preferred Devices  
Amplifier Transistors  
Voltage and Current are Negative  
for PNP Transistors  
http://onsemi.com  
Features  
NPN  
PNP  
Pb−Free Packages are Available*  
COLLECTOR  
3
COLLECTOR  
3
MAXIMUM RATINGS  
2
2
BASE  
BASE  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
1
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
EMITTER  
EMITTER  
CollectorBase Voltage  
Vdc  
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
EmitterBase Voltage  
4.0  
Vdc  
TO−92  
Collector Current − Continuous  
I
500  
mAdc  
CASE 29  
STYLE 1  
C
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
W
mW/°C  
A
D
Derate above 25°C  
1
1
2
2
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
3
3
Derate above 25°C  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
200  
°C/W  
q
JA  
Thermal Resistance, Junction−to−Case  
R
83.3  
°C/W  
q
JC  
MPS  
Axx  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
AYWW G  
G
1. R  
is measured with the device soldered into a typical printed circuit board.  
q
JA  
xx  
A
Y
= 05, 06, 55, or 56  
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2007 − Rev. 3  
MPSA05/D  
 

MPSA56RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
MPSA56RLRMG ONSEMI

完全替代

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