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MPSA44 PDF预览

MPSA44

更新时间: 2024-11-02 22:51:11
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管高压
页数 文件大小 规格书
3页 661K
描述
NPN Silicon High Voltage Transistor 625mW

MPSA44 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MPSA44 数据手册

 浏览型号MPSA44的Datasheet PDF文件第2页浏览型号MPSA44的Datasheet PDF文件第3页 
M C C  
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MPSA44  
Features  
l Through Hole Package  
l 150oC Junction Temperature  
NPN Silicon High  
Voltage Transistor  
625mW  
Pin Configuration  
Bottom View  
C
B
E
TO-92  
A
E
Mechanical Data  
l Case: TO-92, Molded Plastic  
l Marking: A44  
B
Maximum Ratings @ 25oC Unless Otherwise Specified  
C
Charateristic  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol Value Unit  
VCEO  
VCBO  
VEBO  
IC  
400  
400  
5.0  
V
V
V
Emitter-Base Voltage  
Collector Current(DC)  
D
200  
mA  
mW  
625  
5.0  
1.5  
12  
o
Pd  
Pd  
Power Dissipation@TA=25 C  
Power Dissipation@TC=25oC  
mW/oC  
W
mW/oC  
G
Thermal Resistance, Junction to  
Ambient Air  
DIMENSIONS  
oC/W  
R
200  
JA  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
NOTE  
.185  
.185  
---  
.020  
.145  
.105  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
Thermal Resistance, Junction to  
Case  
Operating & Storage Temperature T, TSTG -55~150 oC  
oC/W  
R
JC  
83.3  
E
G
j
www.mccsemi.com  

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