Datasheet > MPSA44_06

MPSA44_06

更新时间： 2024-11-03 11:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管高压
页数	文件大小	规格书
5页	71K
描述
High Voltage Transistor

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中文翻译

获取价格

数据手册

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MPSA44_06 数据手册

MPSA44

Preferred Device

High Voltage Transistor

NPN Silicon

Features

http://onsemi.com

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

400

500

6.0

Unit

Vdc

CEO

BASE

Vdc

CBO

Vdc

EBO

Collector Current − Continuous

300

mAdc

EMITTER

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

MARKING DIAGRAM

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

MPS

A44

THERMAL CHARACTERISTICS

Characteristic

AYWWG

TO−92

(TO−226AA)

CASE 29−11

STYLE 1

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Thermal Resistance,

Junction−to−Case

83.3

°C/W

= Assembly Location

= Year

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

August, 2006 − Rev. 4

MPSA44/D

12 3 4 5

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