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MPSA44 PDF预览

MPSA44

更新时间: 2024-11-02 22:51:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管高压
页数 文件大小 规格书
6页 173K
描述
High Voltage Transistor(NPN Silicon)

MPSA44 数据手册

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Order this document  
by MPSA44/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
400  
500  
6.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
300  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
400  
500  
500  
6.0  
Vdc  
Vdc  
(BR)CEO  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 µAdc, V = 0)  
V
(BR)CES  
(BR)CBO  
(BR)EBO  
C
BE  
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
V
Vdc  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
Vdc  
E
C
Collector Cutoff Current  
(V = 400 Vdc, I = 0)  
I
0.1  
500  
0.1  
µAdc  
nAdc  
µAdc  
CBO  
CB  
Collector Cutoff Current  
(V = 400 Vdc, V  
E
I
CES  
EBO  
= 0)  
CE BE  
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
I
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

MPSA44 替代型号

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