MPS918

更新时间： 2024-09-15 22:46:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
4页	66K
描述
Amplifier Transistors(NPN Silicon)

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数据手册
替代型号

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MPS918 数据手册

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MPS918/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

*Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

MPS918

MPS3563

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

CEO

CBO

EBO

Vdc

3.0

2.0

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.85

6.8

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

(1)

Max

357

147

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 3.0 mAdc, I = 0)

MPS918

MPS3563

—

Collector–Base Breakdown Voltage

(I = 1.0 Adc, I = 0)

Vdc

(BR)CBO

MPS918

MPS3563

—

(I = 100 Adc, I = 0)

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)EBO

MPS918

MPS3563

3.0

2.0

—

Collector Cutoff Current

(V = 15 Vdc, I = 0)

nAdc

CBO

MPS918

MPS3563

—

1. R

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

300 s; Duty Cycle

1.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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MPS918 替代型号

型号	品牌	替代类型	描述	数据表
MMBT918LT1G	ONSEMI	类似代替	VHF/UHF Transistor NPN Silicon
BFS17P	INFINEON	类似代替	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from

与MPS918相关器件

型号	品牌	获取价格	描述	数据表
MPS918_06	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
MPS918-AP	MCC	获取价格	RF Small Signal Bipolar Transistor,
MPS918-BP	MCC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
MPS918G	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
MPS918RL	ONSEMI	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, TO-226AL, 3 PIN
MPS918RL	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS918RL1	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS918RL1	ONSEMI	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, TO-226AL, 3 PIN, BIP RF S
MPS918RLRA	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS918RLRB	MOTOROLA	获取价格	暂无描述