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MPS6523G PDF预览

MPS6523G

更新时间: 2024-11-10 04:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
11页 167K
描述
Amplifier Transistors

MPS6523G 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.07其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):300
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):340 MHz
Base Number Matches:1

MPS6523G 数据手册

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MPS6521 (NPN)  
MPS6523 (PNP)  
MPS6521 is a Preferred Device  
Amplifier Transistors  
Features  
Voltage and Current are Negative for PNP Transistors  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol NPN PNP  
Unit  
2
BASE  
2
BASE  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MPS6521  
MPS6523  
25  
25  
1
EMITTER  
1
EMITTER  
CollectorBase Voltage  
Vdc  
MPS6521  
MPS6523  
40  
25  
EmitterBase Voltage  
4.0  
Vdc  
MARKING  
DIAGRAM  
Collector Current − Continuous  
I
100  
mAdc  
C
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
Derate above 25°C  
MPS  
652x  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
Derate above 25°C  
AYWW G  
TO−92  
CASE 29−11  
STYLE 1  
G
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
(Printed Circuit Board Mounting)  
R
q
JA  
200  
°C/W  
MPS652x = Device Code  
x = 1 or 3  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance, Junction−to−Case  
R
83.3  
°C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
WW  
G
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPS6521  
TO−92  
5000 Units/Box  
5000 Units/Box  
MPS6521G  
TO−92  
(Pb−Free)  
MPS6521RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
MPS6521RLRAG  
TO−92  
(Pb−Free)  
MPS6523  
TO−92  
5000 Units/Box  
5000 Units/Box  
MPS6523G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 3  
MPS6521/D  

MPS6523G 替代型号

型号 品牌 替代类型 描述 数据表
BC640TA ONSEMI

类似代替

PNP Bipolar Transistor
BC640G ONSEMI

类似代替

High Current Transistors
PN4250 FAIRCHILD

功能相似

PNP General Purpose Amplifier

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