MPS6530

更新时间： 2024-09-20 22:46:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
6页	307K
描述
Amplifier Transistor

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数据手册

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MPS6530 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

5.0

600

625

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

Junction Temperature

T , T

150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

0.2

°C/mW

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

—

Vdc

Adc

(BR)CEO

(I = 10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

5.0

(BR)EBO

Collector Cutoff Current

CBO

= 40 Vdc, I = 0)

—

0.05

2.0

= 40 Vdc, I = 0, T = 60°C)

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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