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MPS6530 PDF预览

MPS6530

更新时间: 2024-09-21 21:21:03
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
2页 322K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

MPS6530 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.52Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

MPS6530 数据手册

 浏览型号MPS6530的Datasheet PDF文件第2页 
MPS6530  
MPS6531  
MPS6532  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR MPS6530 series  
types are NPN silicon transistors designed for general  
purpose amplifier applications. The PNP complementary  
types are MPS6533, MPS6534, MPS6535 respectively.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL MPS6530 MPS6531 MPS6532  
UNITS  
V
A
V
V
V
60  
60  
50  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
30  
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
MPS6530  
MPS6531  
MIN MAX  
MPS6532  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
UNITS  
nA  
I
I
I
I
V
V
V
V
=40V  
-
50  
-
50  
-
-
CBO  
CBO  
CBO  
CBO  
CB  
CB  
CB  
CB  
=40V, T =60°C  
A
=30V  
-
2.0  
-
2.0  
-
-
100  
5.0  
-
μA  
nA  
μA  
V
-
-
-
-
-
=30V, T =60°C  
-
-
-
-
-
-
-
A
BV  
BV  
BV  
I =10μA  
60  
60  
50  
CBO  
CEO  
EBO  
C
I =10mA  
40  
-
40  
-
30  
-
V
C
I =10μA  
5.0  
-
5.0  
-
5.0  
-
V
E
V
V
I =100mA, I =10mA  
-
0.5  
1.0  
-
-
0.3  
1.0  
-
-
0.5  
1.2  
-
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =100mA, I =10mA  
-
-
-
V
C
B
h
h
h
V
=1.0V, I =10mA  
30  
60  
-
CE  
CE  
CE  
CB  
CE  
C
V
V
V
V
=1.0V, I =100mA  
40  
120  
-
90  
270  
-
30  
-
FE  
C
=10V, I =500mA  
25  
50  
-
-
FE  
C
C
=10V, I =0, f=100kHz  
-
5.0  
-
5.0  
-
5.0  
pF  
ob  
E
f
=10V, I =50mA  
300(TYP)  
300(TYP)  
300(TYP)  
MHz  
T
C
R1 (29-November 2012)  

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