Datasheet > MPS5179_06

MPS5179_06

更新时间： 2024-09-20 04:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
High Frequency Transistor NPN Silicon

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中文翻译

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数据手册

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MPS5179_06 数据手册

MPS5179

Preferred Device

High Frequency Transistor

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

BASE

Emitter−Base Voltage

2.5

Vdc

Collector Current − Continuous

mAdc

EMITTER

Total Device Dissipation @ T = 25°C

200

1.14

mW/°C

Derate above 25°C

MARKING

DIAGRAM

Total Device Dissipation @ T = 25°C

300

1.71

mW/°C

Derate above 25°C

Storage Temperature Range

stg

−55 to +150

°C

MPS

5179

AYWW G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

TO−92

CASE 29−11

STYLE 1

MPS5179 = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

MPS5179

MPS5179G

Package

Shipping

TO−92

5000 Units/Box

TO−92

(Pb−Free)

MPS5179RLRA

TO−92

2000/Tape & Reel

MPS5179RLRAG

TO−92

(Pb−Free)

MPS5179RLRP

TO−92

2000/Tape & Ammo

MPS5179RLRPG

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

MPS5179/D

12 3

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