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MPQ2906 PDF预览

MPQ2906

更新时间: 2024-01-09 21:39:36
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 153K
描述
0.6A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116, PLASTIC, DIP-14

MPQ2906 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP-14Reach Compliance Code:not_compliant
风险等级:5.89最大集电极电流 (IC):0.6 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:40 V
配置:SEPARATE, 4 ELEMENTS最小直流电流增益 (hFE):30
JEDEC-95代码:TO-116JESD-30 代码:R-PDIP-T14
JESD-609代码:e0元件数量:4
端子数量:14最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:2 W最大功率耗散 (Abs):2 W
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:1.6 V

MPQ2906 数据手册

 浏览型号MPQ2906的Datasheet PDF文件第2页浏览型号MPQ2906的Datasheet PDF文件第3页浏览型号MPQ2906的Datasheet PDF文件第4页浏览型号MPQ2906的Datasheet PDF文件第5页浏览型号MPQ2906的Datasheet PDF文件第6页 
Order this document  
by MPQ2906/D  
SEMICONDUCTOR TECHNICAL DATA  
14 13 12  
11 10  
9
6
8
7
PNP Silicon  
PNP  
1
2
3
4
5
*Motorola Preferred Device  
MAXIMUM RATINGS  
MPQ2906  
MPQ2907 MPQ2907A  
Rating  
Symbol  
Unit  
Vdc  
14  
1
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
–40  
–60  
–60  
–5.0  
–600  
Vdc  
CASE 646–06, STYLE 1  
TO–116  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Each  
Total  
Transistor  
Device  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
0.65  
6.5  
1.9  
19  
Watts  
mW/°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–55 to +125  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
Thermal Resistance, Junction to Ambient  
R
66  
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPQ2906, MPQ2907  
MPQ2907A  
–40  
–60  
C
B
CollectorBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
–60  
–5.0  
Vdc  
Vdc  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
(BR)EBO  
E
C
Collector Cutoff Current  
I
–50  
nAdc  
CBO  
(V  
CB  
(V  
CB  
= –30 Vdc, I = 0)  
MPQ2906, MPQ2907  
MPQ2907A  
E
= –50 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
I
–50  
nAdc  
EBO  
MPQ2906,7 Only  
EB  
E
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1997

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