5秒后页面跳转
MPQ2907 PDF预览

MPQ2907

更新时间: 2024-09-23 20:30:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 153K
描述
40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116

MPQ2907 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:PLASTIC, DIP-14针数:14
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.14Is Samacsys:N
基于收集器的最大容量:8 pF集电极-发射极最大电压:40 V
配置:SEPARATE, 4 ELEMENTS最小直流电流增益 (hFE):100
JEDEC-95代码:TO-116JESD-30 代码:R-PDIP-T14
元件数量:4端子数量:14
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

MPQ2907 数据手册

 浏览型号MPQ2907的Datasheet PDF文件第2页浏览型号MPQ2907的Datasheet PDF文件第3页浏览型号MPQ2907的Datasheet PDF文件第4页浏览型号MPQ2907的Datasheet PDF文件第5页浏览型号MPQ2907的Datasheet PDF文件第6页 
Order this document  
by MPQ2906/D  
SEMICONDUCTOR TECHNICAL DATA  
14 13 12  
11 10  
9
6
8
7
PNP Silicon  
PNP  
1
2
3
4
5
*Motorola Preferred Device  
MAXIMUM RATINGS  
MPQ2906  
MPQ2907 MPQ2907A  
Rating  
Symbol  
Unit  
Vdc  
14  
1
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
–40  
–60  
–60  
–5.0  
–600  
Vdc  
CASE 646–06, STYLE 1  
TO–116  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Each  
Total  
Transistor  
Device  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
0.65  
6.5  
1.9  
19  
Watts  
mW/°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–55 to +125  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
Thermal Resistance, Junction to Ambient  
R
66  
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPQ2906, MPQ2907  
MPQ2907A  
–40  
–60  
C
B
CollectorBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
–60  
–5.0  
Vdc  
Vdc  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
(BR)EBO  
E
C
Collector Cutoff Current  
I
–50  
nAdc  
CBO  
(V  
CB  
(V  
CB  
= –30 Vdc, I = 0)  
MPQ2906, MPQ2907  
MPQ2907A  
E
= –50 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
I
–50  
nAdc  
EBO  
MPQ2906,7 Only  
EB  
E
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1997

与MPQ2907相关器件

型号 品牌 获取价格 描述 数据表
MPQ2907A CENTRAL

获取价格

PNP SILICON QUAD TRANSISTOR
MPQ2907A MOTOROLA

获取价格

0.6A, 60V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
MPQ2907A ONSEMI

获取价格

0.6A, 60V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116, PLASTIC, DIP-14
MPQ2907A_12 CENTRAL

获取价格

nullPNP SILICON QUAD TRANSISTOR
MPQ2907ALEADFREE CENTRAL

获取价格

暂无描述
MPQ2907APBFREE CENTRAL

获取价格

Power Bipolar Transistor,
MPQ2907LEADFREE CENTRAL

获取价格

暂无描述
MPQ2907PBFREE CENTRAL

获取价格

Power Bipolar Transistor,
MPQ2908A MPS

获取价格

4V - 60V Input, Current Mode, Synchronous, Step-Down Controller AEC-Q100 Qualified
MPQ2908A-AEC1 MPS

获取价格

汽车级、4V-60V 输入、电流模式、同步降压控制器