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MPF930ARLRE PDF预览

MPF930ARLRE

更新时间: 2024-11-11 15:44:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 61K
描述
2000mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, 3 PIN

MPF930ARLRE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.14配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:35 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:1.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MPF930ARLRE 数据手册

 浏览型号MPF930ARLRE的Datasheet PDF文件第2页浏览型号MPF930ARLRE的Datasheet PDF文件第3页浏览型号MPF930ARLRE的Datasheet PDF文件第4页浏览型号MPF930ARLRE的Datasheet PDF文件第5页浏览型号MPF930ARLRE的Datasheet PDF文件第6页浏览型号MPF930ARLRE的Datasheet PDF文件第7页 
MPF930, MPF960, MPF990  
Preferred Device  
Small Signal MOSFET  
2 Amps, 35, 60, 90 Volts  
N–Channel TO–92  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Symbol MPF930 MPF960 MPF990  
Unit  
2 AMPERES  
35, 60, 90 VOLTS  
Drain–Source  
Voltage  
V
35  
60  
90  
Vdc  
DS  
DG  
GS  
Drain–Gate Voltage  
V
V
35  
60  
90  
Vdc  
R
R
R
= 0.7 (MPF930)  
= 0.8 (MPF960)  
= 1.2 (MPF990)  
DS(on)  
DS(on)  
DS(on)  
Gate–Source  
Voltage  
– Continuous  
– Non–repetitive  
±20  
±40  
Vdc  
Vpk  
V
GSM  
(t 50 µs)  
p
N–Channel  
Drain Current  
Continuous  
(Note 1.)  
Adc  
D
I
2.0  
3.0  
D
Pulsed (Note 2.)  
I
DM  
Total Device  
Dissipation  
P
D
G
1.0  
8.0  
Watts  
mW/°C  
@ T = 25°C  
A
S
Derate above  
25°C  
Operating and  
Storage Junction  
Temperature  
Range  
T , T  
stg  
–55 to 150  
°C  
J
TO–92  
CASE 29  
Style 22  
Thermal Resistance  
θ
125  
°C/W  
JA  
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
MPF930  
YWW  
1
3
Source  
Drain  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 3  
MPF930/D  

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