是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
FET 技术: | JUNCTION | JESD-609代码: | e0 |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MPF102_04 | FAIRCHILD |
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N-Channel RF Amplifier | |
MPF102_06 | ONSEMI |
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JFET VHF Amplifier | |
MPF102D26Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102D27Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102D74Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102D75Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102G | ONSEMI |
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JFET VHF Amplifier | |
MPF102J05Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102J18Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 | |
MPF102L34Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-9 |