Datasheet > MPF102_04

MPF102_04

更新时间： 2024-11-24 03:48:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		射频放大器
页数	文件大小	规格书
3页	28K
描述
N-Channel RF Amplifier

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MPF102_04 数据手册

MPF102

N-Channel RF Amplifier

•

This device is designed for electronic switching applications such as

low ON resistance analog switching.

•

Sourced from process 50.

TO-92

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-25

°C

T , T

Operating and Storage Junction Temperature Range

- 55 ~ +155

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

= -1.0µA, V = 0

-25

(BR)GSS

= -15V, V = 0

-2.0

-8.0

-7.5

GSS

Gate-Source Cutoff Voltage

Gate-Source Voltage

= 15V, I = 2nA

gs(off)

= 15V, I = 200µA

-0.5

On Characteristics *

Zero-Gate Voltage Drain Current

Forward Transconductance

= 15V, V = 0

2.0

DSS

= 0V, V = 15V, f = 1kHz

2000

7500

µS

Small Signal Characteristics

Common-Source Input Capacitance

= 0, V = 15V, f = 1MHz

7.0

3.0

iss

rss

Common-Source Reverse Transfer

Capacitance

= 0, V = 15V, f = 1MHz

Thermal Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25°C

350

2.8

mW/°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

θJC

θJA

Rev. B, October 2004

12 3

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